High DC Current Gain
: hFE= 4000(Min) @IC= 1A
Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 1A
Incorporating a built-in zener diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
For low-frequency amplificatio
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1983
DESCRIPTION ·High DC Current Gain
: hFE= 4000(Min) @IC= 1A ·Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For low-frequency amplification
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50-70
V
VCEO
Collector-Emitter Voltage
50-70
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2.
2SD1983 Datasheet
