Datasheet Summary
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High DC Current Gain
: hFE= 4000(Min) @IC= 1A
- Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 1A
- Incorporating a built-in zener diode
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- For low-frequency...