2SD1983 datasheet by Inchange Semiconductor.
| Part number | 2SD1983 |
|---|---|
| Datasheet | 2SD1983-INCHANGE.pdf |
| File Size | 184.95 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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hFE= 4000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1983 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA;.
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|---|---|
| 2SD198 | NPN Transistor |
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| 2SD1985 | NPN Transistor |
| 2SD1985A | NPN Transistor |
| 2SD1986 | NPN Transistor |
| 2SD1987 | NPN Transistor |
| 2SD1988 | NPN Transistor |
| 2SD1910 | NPN Transistor |
| 2SD1911 | NPN Transistor |
| 2SD1913 | NPN Transistor |
