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2SD1985A - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) Good Linearity of hFE Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max,)@ IC= 3A Complement to Type 2SB1393A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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Datasheet Details

Part number 2SD1985A
Manufacturer INCHANGE
File Size 212.32 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max,)@ IC= 3A ·Complement to Type 2SB1393A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.
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