Inchange Semiconductor 2SD1985
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1985 |
|---|---|
| Datasheet | 2SD1985 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.)●Good Linearity of hFE
●Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max,)@ IC= 3A
●Complement to Type 2SB1393
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high power amplifications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1985 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1985ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V VCE(sat) Collect...