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2SD1985 page 2
Page 2

2SD1985 Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max,)@ IC= 3A ·plement to Type 2SB1393 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.