2SD1982
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD1982
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 185.08 KB