Datasheet Summary
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
- Low Collector Saturation Voltage
- High DC Current Gain
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching regulator
- General purpose power...