Datasheet Details
| Part number | 2SD1918 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.98 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1918-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918.
| Part number | 2SD1918 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.98 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1918-InchangeSemiconductor.pdf |
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·High fT：fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Excellent linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 1 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA;
IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50uA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1918 | Power Transistor | Rohm |
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2SD1918 | Silicon NPN Transistor | Kexin |
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