Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- High fT：fT=80MHz(TYP)
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
- Excellent linearity of hFE
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Motor drivers,LED driver,Power...
