2SD1918 datasheet by Inchange Semiconductor.
| Part number | 2SD1918 |
|---|---|
| Datasheet | 2SD1918-InchangeSemiconductor.pdf |
| File Size | 189.98 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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·High fT：fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1918 | Power Transistor | Rohm |
 |
2SD1918 | Silicon NPN Transistor | Kexin |
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