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2SD1918 Datasheet PDF

Kexin Electronics 2SD1918

Silicon NPN Transistor

Part No. 2SD1918
Datasheet 2SD1918 Download
Manufacturer Kexin Electronics
Description Silicon NPN Transistor
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2SD1918 datasheet page 1 preview

FEATURES

High breakdown voltage.(BVCEO = 160V) Low collector output capacitance.Typ. 20pF at VCB = 10V +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High transition frequency.(fT = 80MHZ) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation TC = 25 Junction temperature Storage temperature * Pw=200msec duty=1/2 Tj Tstg Symbol VCBO VCEO VEBO IC Rating 160 160 5 1.5 3 PC 1 10 150 -55 to +150 Unit V V V A(DC) A(Pulse) * W W

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage * Base to emitter voltage * DC current transfer ratio Transition frequency Output capacitance * Measured using pulse current.