Datasheet4U Logo Datasheet4U.com

2SD1918 - Silicon NPN Transistor

Datasheet Summary

Features

  • High breakdown voltage. (BVCEO = 160V) Low collector output capacitance. Typ. 20pF at VCB = 10V +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High transition frequency. (fT = 80MHZ) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collec.

📥 Download Datasheet

Datasheet preview – 2SD1918

Datasheet Details

Part number 2SD1918
Manufacturer Kexin
File Size 57.30 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1918 Datasheet
Additional preview pages of the 2SD1918 datasheet.

📁 Similar Datasheet

  • 2SD1918 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1918 - Power Transistor (Rohm)
  • 2SD1910 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1910 - NPN Transistor (INCHANGE)
  • 2SD1911 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1911 - NPN Transistor (INCHANGE)
  • 2SD1912 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SD1912 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1913 - Power Transistor (GME)
  • 2SD1913 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
Other Datasheets by Kexin
  • 2SD1963 - Power Transistor
  • 2SD1000 - NPN Silicon Epitaxial Transistor
  • 2SD1001 - NPN Silicon Epitaxial Transistor
  • 2SD1005 - NPN Silicon Epitaxial Transistor
  • 2SD1006 - NPN Silicon Epitaxial Transistor
  • 2SD1007 - NPN Silicon Epitaxial Transistor
  • 2SD1033 - Silicon NPN Transistor
  • 2SD1048 - NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription

Click to expand full text
SMD Type Silicon NPN Epitaxial 2SD1918 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage.(BVCEO = 160V) Low collector output capacitance.Typ. 20pF at VCB = 10V +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High transition frequency.(fT = 80MHZ) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation TC = 25 Junction temperature Storage temperature * Pw=200msec duty=1/2 Tj Tstg Symbol VCBO VCEO VEBO IC Rating 160 160 5 1.
Published: |