isc Silicon NPN Power Transistor INCHANGE Semicon.
Inchange Semiconductor
2SD1918 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·High fT：fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage- : V(BR.
Rohm
2SD1918 - Power Transistor
2SD1918 NPN 1.5A 160V Middle Power Transistor Parameter VCEO IC Value 160V 1.5A lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP .
Kexin
2SD1918 - Silicon NPN Transistor
SMD Type Silicon NPN Epitaxial 2SD1918 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage.(BVCEO = 160V) Low .
Rohm
D1918 - 2SD1918
2SD1918 NPN 1.5A 160V Middle Power Transistor Parameter VCEO IC Value 160V 1.5A lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP .