ROHM Semiconductor 2SD1918
NPN Power Transistor
2SD1918 NPN 1.5A 160V Middle Power Transistor Parameter VCEO IC Value 160V 1.5A lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V 4) Lead Free/RoHS Compliant. lOutline CPT3 Collector Base Emitter 2SD1918 (SC-63) <SOT-428> Datasheet lInner circuit Collector Base Emitter lApplications Motor driver , LED driver Power supply lPackaging specifications Part No. Package 2SD1918 CPT3 Package size (mm) 6595 Taping code TL Reel size (mm) Tape width (mm) Basic ordering unit (pcs) 330 16 2,500 Marking D1918 © 2013 ROHM Co., Ltd. All rights reserved. 1/6 2013.07 - Rev.D 2SD1918 Data Sheet lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature *1 Pw=20ms , duty=1/2 *2 Mounted on a substrate *3 Tc=25°C Symbol VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg Values Unit 160 V 160 V 5 V 1.5 A 3.0 A 1 W 10 W 150 °C -55 to +150 °C lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Min.