Datasheet Details
| Part number | 2SD1928 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.93 KB |
| Description | Power Transistor |
| Datasheet | 2SD1928_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD1928.
| Part number | 2SD1928 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.93 KB |
| Description | Power Transistor |
| Datasheet | 2SD1928_InchangeSemiconductor.pdf |
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·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse 12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.8 A 2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 4mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
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