Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
- High Speed Switching
- Good Linearity of hFE
- High Collector Power Dissipation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power switching...
