Datasheet Details
| Part number | 2SD2000 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.86 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2000-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2000 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.86 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2000-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High Speed Switching ·Good Linearity of hFE ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current- Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2000 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2000 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2000 | Silicon NPN Transistor | Panasonic Semiconductor |
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2SD2000 | SILICON POWER TRANSISTOR | SavantIC |
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