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2SD200 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD200.

General Description

·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2.5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD200 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;

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