Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.)
- Low Collector Saturation Voltage- High Switching Speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for color TV horizontal output...
