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2SD2082 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) High DC Current Gain- : hFE= 2000( Min.) @(IC= 8A, VCE= 4V) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 8A, IB= 16mA) Complement to Type 2SB1382 Minimum Lot-to-Lot variations for robust device perfo

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Datasheet Details

Part number 2SD2082
Manufacturer INCHANGE
File Size 200.24 KB
Description NPN Transistor
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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= 8A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 8A, IB= 16mA) ·Complement to Type 2SB1382 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for chopper regulator, motor and general purpose applications.
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