2SD2082 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= 8A, VCE= 4V) ·Low Collector Saturation Voltage-.
2SD2082 is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Sanken |
2SD2082 | Silicon NPN Transistor |
SavantIC |
2SD2082 | SILICON POWER TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= 8A, VCE= 4V) ·Low Collector Saturation Voltage-.