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Darlington
2SD2081
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2081 10max 10max 120min 2000min 1.5max 2.0max 60typ 95typ V V MHz pF
13.0min
Equivalent circuit
B
C
(2k Ω) (200 Ω) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2081 120 120 6 10(Pulse15) 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Driver for Solenoid, Motor and General Purpose
(Ta=25°C) Unit
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
µA
V
16.9±0.3 8.4±0.2
mA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.