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Darlington
2SD2083
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=12A IC=12A, IB=24mA IC=12A, IB=24mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2083 10max 10max 120min 2000min 1.8max 2.5max 20typ 340typ V MHz pF
5.45±0.1 B C E 20.0min 4.0max
Equivalent circuit
B
C
(2k Ω) (100 Ω) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2083 120 120 6 25(Pulse40) 2 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Driver for Solenoid, Motor and General Purpose
(Ta=25°C) Unit
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
µA
mA
19.9±0.3
4.0
V
a b
ø3.2±0.
2SD2083 Datasheet
