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2SD2081 - NPN Transistor

Datasheet Summary

Description

High DC Current Gain- : hFE= 2000(Min)@ (VCE= 4V, IC= 5A) Large Current Capability Complement to Type 2SB1259 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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Datasheet Details

Part number 2SD2081
Manufacturer INCHANGE
File Size 191.30 KB
Description NPN Transistor
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Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 4V, IC= 5A) ·Large Current Capability ·Complement to Type 2SB1259 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2081 isc website：www.iscsemi.
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