Datasheet Details
| Part number | 2SD2047 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.25 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2047-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD2047.
| Part number | 2SD2047 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.25 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2047-INCHANGE.pdf |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse 10 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.55 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2047R | Power Transistor | Fuji Electric |
| Part Number | Description |
|---|---|
| 2SD2045 | Silicon NPN Darlington Power Transistor |
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| 2SD2000 | NPN Transistor |
| 2SD2001 | NPN Transistor |
| 2SD201 | NPN Transistor |
| 2SD2012 | NPN Transistor |
| 2SD2014 | NPN Transistor |
| 2SD2015 | NPN Transistor |
| 2SD2016 | NPN Transistor |
| 2SD2017 | NPN Transistor |