High DC Current Gain-
: hFE = 1500(Min)@ IC= 3A
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 4A
Incorporating a built-in zener diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in i
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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2141
DESCRIPTION ·High DC Current Gain-
: hFE = 1500(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.