Datasheet4U Logo Datasheet4U.com

2SD2141 - NPN Transistor

General Description

High DC Current Gain- : hFE = 1500(Min)@ IC= 3A Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 4A Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in i

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2141 DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.