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2SD2374 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Collector Power Dissipation- : PC= 25 W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max)@ (IC= 3A, IB= 0.375A) Complement to Type 2SB1548 Minimum Lot-to-Lot variations for robust device performance and

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Datasheet Details

Part number 2SD2374
Manufacturer INCHANGE
File Size 195.21 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V(Max)@ (IC= 3A, IB= 0.375A) ·Complement to Type 2SB1548 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications.
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