2SD237
DESCRIPTION
- Excellent Safe Operating Area
- Low Collector-Emitter Saturation Voltage
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
- Designed for general-purpose power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation@TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature
-65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)- Collector-Emitter Sustaining Voltage IC=30m A; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC=...
