Part 2SD2390
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 225.39 KB
Inchange Semiconductor

2SD2390 Overview

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) - High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 4V) - Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) - Complement to Type 2SB1560 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.