High DC Current Gain
: hFE= 1000(Min) @IC= 1A
Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 1A
Built-in zener diode between collector and base
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Motor，Relay drive
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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2397
DESCRIPTION ·High DC Current Gain
: hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 1A ·Built-in zener diode between collector and base ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Motor，Relay drive
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50-70
V
VCEO
Collector-Emitter Voltage
50-70
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
2.
2SD2397 Datasheet
