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2SD2395 - NPN Transistor

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Description

Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2A Wide Area of Safe Operation Complement to Type 2SB1566 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and driver appli

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Datasheet Details

Part number 2SD2395
Manufacturer INCHANGE
File Size 190.46 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2A ·Wide Area of Safe Operation ·Complement to Type 2SB1566 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4.5 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2395 isc website：www.iscsemi.
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