Low Collector Saturation Voltage-
: VCE(sat)= 1.0 (Max)@ IC= 2A
Good Linearity of hFE
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifier and driver
application
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0 (Max)@ IC= 2A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier and driver
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
2 W
25
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD2394
isc website：www.iscsemi.
2SD2394 Datasheet
