| Part Number | 2SD2394 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. mitter Breakdown Voltage IC= 1mA ; IB= 0 60 V V(BR CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 80 V V(BR EBO Emitter-Base Breakdown Voltage IE= 50μA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2. |
2SD2394 Datasheet and Specifications PDF
The 2SD2394 is a NPN Transistor.
Key Specifications
| Mount Type | Through Hole |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SD2394 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | ROHM |
| Overview | 2SD2394 Transistors For Power Amplification (60V, 3A) 2SD2394 zStructure NPN Silicon Triple Diffused Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 10.0 4.5 φ3.2 2. 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Low frequency amplifier zComplements PNP 2SB1565 NPN 2SD2394 zAbsolute maximum ratings. |
| Part Number | 2SD2394 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SB1565 PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and sym. ion voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;IB=0 IC=50µA ;IE=0 IE=50µA ;IC=0 IC=2A ;IB=0.2A IC=2A ;IB=0.2A VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V;f=5MHz 100 MIN 60. |