2SD2390 Datasheet and Specifications PDF

The 2SD2390 is a Silicon NPN Transistor.

Key Specifications

Pins3
Max Operating Temp150 °C
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Part Number2SD2390 Datasheet
ManufacturerSanken
Overview 2SD2390 Darlington Equivalent circuit C B (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application : Audio, Series Regulator and General Purpose sAbsolute max. 1.8 5.0±0.2 4.0 19.9±0.3 20.0min 4.0max a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 2.0g a. Part No. b. Lot No. Collector Current IC(A) 10mA 2.5mA I C
* V CE Characteristics (Typical) 10 2mA 1.5mA 8 1.2mA 1mA 6 0.8mA 4 0.6mA.
Part Number2SD2390 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PN package ·Complement to type 2SB1560 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simp. cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=0 IC=7A ;IB=7mA IC=7A ;IB=7mA VCB=160V IE=0 VEB=5V; IC=0 IC=7A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 5000 95 55 MIN 150 2SD2390 SYMBOL V(BR)CEO VCEsa.
Part Number2SD2390 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) ·Co. se specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 7mA VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 7mA ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff.

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