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2SD2398 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 1A Low Collector Saturation Voltgae: VCE(sat)= 1.5V(Max.)@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor，Relay

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2398 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae: VCE(sat)= 1.5V(Max.)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor，Relay drive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 2.