2SD2539 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2539 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;.