Datasheet Details
| Part number | 2SD2539 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.75 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2539-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2539 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.75 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2539-INCHANGE.pdf |
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·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 7 A ICP Collector Current- Pulse 14 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2539 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2539 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ;
IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2539 | NPN Triple Diffused Planar Silicon Transistor | Toshiba Semiconductor |
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2SD2539 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD2500 | NPN Transistor |
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| 2SD2549 | NPN Transistor |
| 2SD2550 | NPN Transistor |
| 2SD2551 | NPN Transistor |
| 2SD2553 | NPN Transistor |
| 2SD2557 | NPN Transistor |
| 2SD2558 | NPN Transistor |
| 2SD2559 | NPN Transistor |
| 2SD256 | Silicon NPN Power Transistor |