Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
Low Collector Saturation Voltgae-
: VCE(sat)= 0.7V(Max.)@ IC= 3A
Good Linearity of hFE
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier appl
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltgae-
: VCE(sat)= 0.7V(Max.)@ IC= 3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃
TJ
Junction Temperature
5
A
20 W
2
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SD2549
isc website：www.iscsemi.
2SD2549 Datasheet
