q q q
15.0±0.5
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 80 6 5 3 20 2 150.
55 to +150 Unit V V V A A W ˚C ˚C
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
φ3.2±0.1
13.7±0.2 4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current.
Silicon NPN triple diffusion planer type Transistor
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Power Transistors
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
s Features
q q q
15.0±0.5
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 80 6 5 3 20 2 150 –55 to +150 Unit V V V A A W ˚C ˚C
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
φ3.2±0.1
13.7±0.2 4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5
2.6±0.
2SD2549 Datasheet
