Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1700V (Min)
- High Switching Speed
- Low Saturation Voltage
- Built-in Damper Diode
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Horizontal deflection output for high resolution display, color TV applications
- High speed switching...
