| Part number | 2SD2553 |
|---|---|
| Datasheet | 2SD2553-INCHANGE.pdf |
| File Size | 210.81 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD2553 | NPN Transistor | Toshiba Semiconductor |
 |
2SD2553 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD2553 | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | TGS |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD2550 | NPN Transistor |
| 2SD2551 | NPN Transistor |
| 2SD2557 | NPN Transistor |
| 2SD2558 | NPN Transistor |
| 2SD2559 | NPN Transistor |
| 2SD2500 | NPN Transistor |
| 2SD2539 | NPN Transistor |
| 2SD254 | NPN Transistor |
| 2SD2549 | NPN Transistor |
| 2SD256 | Silicon NPN Power Transistor |
