Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High DC Current Gain
: hFE= 1500(Min.)@ IC= 1A, VCE= 5V
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 200V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for series regulator and general purpose...
