2SD2557
Description
High DC Current Gain : hFE= 1500(Min.)@ IC= 1A, VCE= 5V Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD2557
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 210.52 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SD2557 | SavantIC | SILICON POWER TRANSISTOR |
| 2SD2550 | Toshiba | Silicon NPN Transistor |
| 2SD2553 | Toshiba | NPN Transistor |
| D2553 | Toshiba | 2SD2553 |
| 2SD2553 | TGS | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |