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2SD320 - NPN Transistor

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Part number 2SD320
Manufacturer INCHANGE
File Size 189.58 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR) CEO= 230V(Min) Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 230

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