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2SD325 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.5A Complement to Type 2SB511 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low freq

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Datasheet Details

Part number 2SD325
Manufacturer INCHANGE
File Size 209.18 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SD325 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.5A ·Complement to Type 2SB511 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ·Recommended for 5 watts AF power amplifier output use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 1.
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