Datasheet Details
| Part number | 2SD343 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.46 KB |
| Description | NPN Transistor |
| Datasheet | 2SD343-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD343.
| Part number | 2SD343 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.46 KB |
| Description | NPN Transistor |
| Datasheet | 2SD343-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max) @IC= 2.0A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 70 V 40 V 6 V 3 A 5 A 1 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD343 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
| Part Number | Description |
|---|---|
| 2SD345 | NPN Transistor |
| 2SD347 | NPN Transistor |
| 2SD348 | NPN Transistor |
| 2SD310 | NPN Transistor |
| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |