Datasheet Details
| Part number | 2SD347 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.48 KB |
| Description | NPN Transistor |
| Datasheet | 2SD347-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD347.
| Part number | 2SD347 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.48 KB |
| Description | NPN Transistor |
| Datasheet | 2SD347-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 3.0A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD347 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA;
| Part Number | Description |
|---|---|
| 2SD343 | NPN Transistor |
| 2SD345 | NPN Transistor |
| 2SD348 | NPN Transistor |
| 2SD310 | NPN Transistor |
| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |