Datasheet Details
| Part number | 2SD350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.15 KB |
| Description | NPN Transistor |
| Datasheet | 2SD350-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD350.
| Part number | 2SD350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.15 KB |
| Description | NPN Transistor |
| Datasheet | 2SD350-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=90℃ TJ Junction Temperature 8 A 35 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD350 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD350 | NPN Power Transistor | CDIL |
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2SD350A | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD357 | Silicon NPN Power Transistor |
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| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |
| 2SD318 | NPN Transistor |
| 2SD320 | NPN Transistor |