Datasheet4U Logo Datasheet4U.com

2SD350 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV rece

📥 Download Datasheet

Datasheet preview – 2SD350

Datasheet Details

Part number 2SD350
Manufacturer INCHANGE
File Size 177.15 KB
Description NPN Transistor
Datasheet download datasheet 2SD350 Datasheet
Additional preview pages of the 2SD350 datasheet.

📁 Similar Datasheet

  • 2SD350 - NPN Power Transistor (CDIL)
  • 2SD350A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD352 - NPN Transistor (ETC)
  • 2SD352 - Si NPN Diffused Junction Mesa Type Transistor (Panasonic Semiconductor)
  • 2SD355 - NPN Transistor (ETC)
  • 2SD356 - NPN Transistor (ETC)
  • 2SD358 - NPN Transistor (ETC)
  • 2SD359 - (2SD359 / 2SD360) NPN Transistor (ETC)
  • 2SD30 - NPN Transistor (Sanyo Semiconductor)
  • 2SD311 - Silicon NPN Power Transistor (Inchange Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD350 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=90℃ TJ Junction Temperature 8 A 35 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc website：www.iscsemi.
Published: |