2SD357 datasheet by Inchange Semiconductor.
| Part number | 2SD357 |
|---|---|
| Datasheet | 2SD357-INCHANGE.pdf |
| File Size | 211.52 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·plement to Type 2SB527 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...
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| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |
| 2SD318 | NPN Transistor |
| 2SD320 | NPN Transistor |
