2SD357
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Good Linearity of hFE Complement to Type 2SB527 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD357
- Description: Silicon NPN Power Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 211.52 KB