Datasheet Details
| Part number | 2SD357 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.52 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD357-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD357 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.52 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD357-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·plement to Type 2SB527 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.8 A 1 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD357 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Part Number | Description |
|---|---|
| 2SD350 | NPN Transistor |
| 2SD310 | NPN Transistor |
| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |
| 2SD318 | NPN Transistor |
| 2SD320 | NPN Transistor |