Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V (Min)
- Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃
- plement to Type 2SB547
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in line-operated color TV vertical deflection of plementary symmetry...
