Datasheet Details
| Part number | 2SD402 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.07 KB |
| Description | NPN Transistor |
| Datasheet | 2SD402-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD402.
| Part number | 2SD402 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.07 KB |
| Description | NPN Transistor |
| Datasheet | 2SD402-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·Complement to Type 2SB547 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated color TV vertical deflection of complementary symmetry circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 3 A IBM Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 78 ℃/W Rth j-c Thermal Resistance,Junction to Case 4.16 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD402 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD402 | SILICON POWER TRANSISTOR | SavantIC |
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2SD402A | Power Transistor | NEC |
| Part Number | Description |
|---|---|
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| 2SD425 | NPN Transistor |
| 2SD426 | NPN Transistor |
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| 2SD45 | NPN Transistor |
| 2SD459 | NPN Transistor |
| 2SD460 | NPN Transistor |
| 2SD463 | NPN Transistor |
| 2SD470 | NPN Transistor |