Datasheet Details
| Part number | 2SD544 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SD544-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD544.
| Part number | 2SD544 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SD544-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max.) @ IC= 4.0A ·With TO-220C Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 43 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD544 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100uA;
| Part Number | Description |
|---|---|
| 2SD546 | NPN Transistor |
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| 2SD531 | NPN Transistor |
| 2SD533 | NPN Transistor |
| 2SD534 | NPN Transistor |
| 2SD535 | NPN Transistor |