Datasheet4U Logo Datasheet4U.com

2SD546 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Continuous Collector Current-IC= 1A ·Power Dissipation-PD=30W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation .

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.0 A PC Collector Power Dissipation@TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD546 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC=10mA ;

IB=0 VCE(sat) Collector-Emitter Voltage Saturation IC= 500mA;

2SD546 Distributor