| Part number | 2SD673 |
|---|---|
| Datasheet | 2SD673-INCHANGE.pdf |
| File Size | 203.28 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·plement to Type 2SB653 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
See all Inchange Semiconductor datasheets
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