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2SD673 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High Power Dissipation- : PC= 60W(Max)@TC=25℃ Complement to Type 2SB653 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appli

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Datasheet Details

Part number 2SD673
Manufacturer INCHANGE
File Size 203.28 KB
Description NPN Transistor
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isc Silicon NPN Power Transistors 2SD673 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·Complement to Type 2SB653 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.
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