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2SD676 - NPN Transistor

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Part number 2SD676
Manufacturer INCHANGE
File Size 202.76 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) High Power Dissipation- : PC= 125W(Max)@TC=25℃ Complement to Type 2SB656 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications.

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