| Part number | 2SD676 |
|---|---|
| Datasheet | 2SD676-INCHANGE.pdf |
| File Size | 202.76 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High Power Dissipation- : PC= 125W(Max)@TC=25℃ ·plement to Type 2SB656 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD670 | NPN Transistor |
| 2SD673 | NPN Transistor |
| 2SD675 | NPN Transistor |
| 2SD679 | NPN Transistor |
| 2SD60 | NPN Transistor |
| 2SD600 | NPN Transistor |
| 2SD600K | NPN Transistor |
| 2SD605 | NPN Transistor |
| 2SD608 | NPN Transistor |
| 2SD612 | NPN Transistor |
