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2SD693 - NPN Transistor

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Description

Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V(Min) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as:

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Datasheet Details

Part number 2SD693
Manufacturer INCHANGE
File Size 229.54 KB
Description NPN Transistor
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD693 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 450 VCEO Collector-Emitter Voltage 450 VEBO Emitter-Base Voltage 10 IC Collector Current 10 ICM Collector Current-peak 15 IB Base Current 1 PC Collector Power Dissipation @TC=25℃ 80 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V
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