Datasheet4U Logo Datasheet4U.com

2SD690 - NPN Transistor

Datasheet Summary

Description

Collector Current: IC= 7A Collector-Emitter BreakdownVoltage- : V(BR)CEO= 70V(Min.) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV horizontal deflection applications.

📥 Download Datasheet

Datasheet preview – 2SD690

Datasheet Details

Part number 2SD690
Manufacturer INCHANGE
File Size 196.83 KB
Description NPN Transistor
Datasheet download datasheet 2SD690 Datasheet
Additional preview pages of the 2SD690 datasheet.

📁 Similar Datasheet

  • 2SD691 - Si NPN Transistor (Panasonic)
  • 2SD692 - Silicon NPN Darlingtion Power Transistor (Inchange Semiconductor)
  • 2SD697A - Silicon NPN Transistor (Toshiba)
  • 2SD698 - NPN Transistor (Toshiba)
  • 2SD600 - PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SD600 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD600 - PNP / NPN Epitaxial Planar Silicon Transistors (ON Semiconductor)
  • 2SD600K - PNP/NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SD600K - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD600K - PNP / NPN Epitaxial Planar Silicon Transistors (ON Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD690 DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 70V(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
Published: |