Datasheet Details
| Part number | 2SD692 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.73 KB |
| Description | Silicon NPN Darlingtion Power Transistor |
| Datasheet | 2SD692_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlingtion Power Transistor.
| Part number | 2SD692 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.73 KB |
| Description | Silicon NPN Darlingtion Power Transistor |
| Datasheet | 2SD692_InchangeSemiconductor.pdf |
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·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 6 A IB Base Current -Continuous 3 A PC Collector Power Dissipation@TC=25℃ 50 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD692 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
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