2SD692 datasheet by Inchange Semiconductor.
| Part number | 2SD692 |
|---|---|
| Datasheet | 2SD692_InchangeSemiconductor.pdf |
| File Size | 209.73 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlingtion Power Transistor |
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·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor TC=25℃...
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