Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
Good Linearity of hFE
Wide Area of Safe Operation
Complement to Type 2SB691
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifi
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD727
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB691 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier and power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
8
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SD727 Datasheet
