2SD728 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB692 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and power switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD728 TC=25℃ unless otherwise...
