2SD745 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·plement to Type 2SB705 ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio frequency power amplifier applications ·Suitable for output stages of 60~120 watts audio amplifier and voltage regulations. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃...