Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
Complement to Type 2SB705
High Power Dissipation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
For audio frequency power amplifier applications
Suitable for outp
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isc Silicon NPN Power Transistor
2SD745
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·Complement to Type 2SB705 ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For audio frequency power amplifier applications ·Suitable for output stages of 60~120 watts audio amplifier
and voltage regulations.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
15
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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2SD745 Datasheet
