Datasheet Details
| Part number | 2SD745 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.14 KB |
| Description | NPN Transistor |
| Datasheet | 2SD745-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD745.
| Part number | 2SD745 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.14 KB |
| Description | NPN Transistor |
| Datasheet | 2SD745-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Complement to Type 2SB705 ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio frequency power amplifier applications ·Suitable for output stages of 60~120 watts audio amplifier and voltage regulations.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD745 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD745A | SILICON POWER TRANSISTOR | SavantIC |
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2SD745B | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD74 | NPN Transistor |
| 2SD743 | NPN Transistor |
| 2SD748 | NPN Transistor |
| 2SD705 | NPN Transistor |
| 2SD706 | NPN Transistor |
| 2SD711 | NPN Transistor |
| 2SD715 | NPN Transistor |
| 2SD716 | NPN Transistor |
| 2SD717 | NPN Transistor |
| 2SD718 | NPN Transistor |