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2SD772 - NPN Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.6V(Max.) @IC= 5A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier

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Datasheet Details

Part number 2SD772
Manufacturer INCHANGE
File Size 204.03 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.6V(Max.) @IC= 5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCES Collector-Emitter Voltage 150 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD772 isc website：www.iscsemi.
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