| Part number | 2SD811 |
|---|---|
| Datasheet | 2SD811-INCHANGE.pdf |
| File Size | 176.69 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Breakdown Voltage- : VCBO= 900V (Min) ·High Switching Speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD811 TC=25℃ unless otherwise specified SYMBO L PARAMETER V(BR)EBO Emitter-Base Breakdown Voltage CONDITIONS IE= 1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD811 | Silicon NPN Transistor | Toshiba |
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| 2SD812 | NPN Transistor |
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| 2SD820 | NPN Transistor |
| 2SD821 | NPN Transistor |
| 2SD822 | NPN Transistor |
